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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Small Signal Amplifier .
CHEMX3PT
CURRENT 150 mAmpere
FEATURE
* Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Two the 2SC2412K in one package. * NPN Silicon Transistor
0.9~1.1 0.15~0.3
(3) (4)
SOT-563
(1)
(5)
0.50 0.50
1.5~1.7
MARKING
* X3
1.1~1.3
0.5~0.6 0.09~0.18
CIRCUIT
3
1
1.5~1.7
4
6
Dimensions in millimeters
SOT-563
2SC2412K LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 60 50 7 150 150 15 150 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW
o
C C C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-11
RATING CHARACTERISTIC CURVES ( CHEMX3PT )
2SC2412K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Collector Capacitance Transition Frequency CONDITION IC=50uA IC=1mA IE=50uA IE=0; VCB=60V IC=0; VEB=7V VCE=6V IC=1mA IC=50mA; IB=5mA IE=ie=0; VCB=12V; f=1MHz IC=2mA; VCE=12V; f=100MHz SYMBOL BVCBO BVCEO BVEBO ICBO ICEO hFE VCEsat Cob fT MIN. 60 50 7 120 TYPE 2 180 MAX. 0.1 0.1 560 0.4 3.5 Volts pF MHz uA UNITS Volts Volts Volts
RATING CHARACTERISTIC CURVES ( CHEMX3PT )
2SC2412K Typical Electrical Characteristics
Fig.1
50
Grounded emitter propagation characteristics
VCE=6V
COLLECTOR CURRENT : IC (mA)
Fig.2
100
Grounded emitter output characteristics
0.50mA
mA 0.45 A 0.40m 35mA 0. 0.30mA
500
Fig.3 DC current gain vs. collector current (1)
Ta=25OC
Ta=25OC
COLLECTOR CURRENT : IC (mA)
20 10 5
Ta=100 OC
25 C 55 OC
DC CURRENT GAIN : hFE
80
200
60
0.25mA 0.20mA
VCE=5V 3V 1V
100
2 1 0.5 0.2 0.1 0
40
0.15mA 0.10mA
50
20
0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0
20 10 0.2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V)
0.5 1
2
5
10 20
50 100 200
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current (2)
500 Ta=100OC
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig. 5 Collector-emitter saturation voltage vs. collector current
0.5
Fig.6 Collector-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
Ta=25
0.5
IC/IB=10
DC CURRENT GAIN : hFE
200
25OC -55OC
0.2 IC/IB=50 20 10
0.2 Ta=100OC 25OC -55OC
100
0.1 0.05
0.1 0.05
50
0.02
0.02
20 10 0.2
0.5 1
2
5
10 20
50 100 200
0.01 0.2
0.01 0.2 0.5 1 2 5 10 20 50 100 200
0.5 1
2
5
10
20
50 100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Gain bandwidth product vs. emitter current
BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps)
TRANSITION FREQUENCY : fT (MHz)
Fig.8 Base-collector time constant vs. emitter current
Ta=25OC f=32MHZ VCB=6V
500
Ta=25O VCE=6V
200
100
200
50
100
20
50 0.5
10 0.2 0.5 1 2 5 10
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
EMITTER CURRENT : IE (mA)

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